RAPD Analysis on Avermectin High-Producing Strain of Streptomyces Avermilis Irradiated by 12C6+ Ions

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Italic textAbstract. Industrial Streptomyces avermitilis were irradiated by 80 MeV/u 12C6+ ions whith were provided by the Institute of Modern Physics, Chinese Academy of Sciences, Lanzhou Heavy Ion Accelerator. The high titers of mutants were obtained with different doses. The original strains and the high titers of mutants were detected and analyzed by Random Amplified Polymorphic DNA technology (RAPD). The results show that bands could be got from amplify the original strain by 4 primers of 28 primers and the high titers of mutants were amplified by the 4 primers. The amplified products were analysed by Jaccard formula. After 10 Gy, 30 Gy, 40 Gy, 45 Gy, 50 Gy, 70 Gy isodose irradiation, the similarity index were 0.63, 0.75, 0.71, 0.8, 0.61, 0.73. It was confirmed that at the DNA level, not only the high titers strains and the original mutant strain’s DNA were different, but also the high titers of the different mutants’ DNA were different. Therefore, ion implantation method changed the different Streptomyces avermitilis genetic material which promote the importance trace of avermectin biosynthesis changed, and different high titers of Streptomyces avermitilis were obtained.

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Periodical:

Edited by:

Zhijiu Ai, Xiaodong Zhang, Yun-Hae Kim and Prasad Yarlagadda

Pages:

701-704

DOI:

10.4028/www.scientific.net/AMR.339.701

Citation:

Y. H. Bo et al., "RAPD Analysis on Avermectin High-Producing Strain of Streptomyces Avermilis Irradiated by 12C6+ Ions", Advanced Materials Research, Vol. 339, pp. 701-704, 2011

Online since:

September 2011

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$35.00

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