The Dislocation Density Distribution of Different Types of Doped InP Wafers

Xin Jiang Luo; Nie Feng Sun

doi:10.4028/www.scientific.net/AMR.396-398.425

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 396-398The Dislocation Density Distribution of Different...

The Dislocation Density Distribution of Different Types of Doped InP Wafers

Abstract:

It is of great significance to study on the dislocation density distribution of different types of doped indium phosphide (InP) crystal wafers for fabricating high-quality InP single crystal with low dislocation density. In the paper, a new etched pits density mapping (EPD mapping) measurement is introduced to measure the dislocation density distribution of the S-doped, Fe-doped and non-doped InP wafers pulled by high-pressure liquid encapsulated Czochralski (HP-LEC) technique. Test results show that in the three types of InP wafers， the S-doped InP wafer’s dislocation density is lowest and uniformity is best; the non-doped InP wafer’s dislocation density is maximum and uniformity is the worst; the Fe-doped InP wafer’s dislocation density and uniformity are between the S-doped and non-doped InP wafers. In the paper, the measurement results are analyzed in detail also from the faces of the doping and crystal growth process and thermodynamic mechanism. This study shows that in addition to traditional methods, using reasonable doping process can also effectively reduce the dislocation in the crystal, enhance the lattice strength and improve the uniformity of the InP single crystal.

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Periodical:

Advanced Materials Research (Volumes 396-398)

Pages:

425-428

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.396-398.425

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Online since:

November 2011

Authors:

Xin Jiang Luo, Nie Feng Sun

Keywords:

Dislocation, Dopant, Indium Phosphide, Wafer

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References

[1] X.L. ZHOU, Y.W. ZHAO, N.F. SUN, et al.: Journal of Crystal Growth, Vol. 264 (2004), P. 17-20.

Google Scholar

[2] N.F. SUN, Y.W. ZHAO and L. X. CAO: Proceedings of International School on Crystal Growth Methods and Processes, Chennai, India (2000), p.99.

Google Scholar

[3] N.F. SUN and X.W. WU: 13th American Conference on Crystal Growth and Epitaxy (ACCGE-13), USA ,(2001).

Google Scholar

[4] N.F. SUN, X.W. WU and Y.W. ZHAO: 14th Indium Phosphide and Related Materials Conference, Stockholm, Sweden, B5-2(2002).

Google Scholar

[5] Y.W. ZHAO, N.F. SUN, H. DONG, et al.: Material Sci. & Eng. B, (2002), P.521-524.

Google Scholar

[6] A. JORDAN, A. VON NEIDA and R. CARUSO: Journal of Crystal Growth, Vol.79: (1986), P.243-262.

Google Scholar

[7] X. KANG, L. MAO and R. YANG: Journal of Rare Earths, Vol. 25 (2007), P. 360-362.

Google Scholar