Off-Lattice KMC Simulation of the Growth Process of Ti-Si-N Film

Abstract:

In order to investigate the progress of the composite films growth, and the influence of the process parameters to the film‘s structure, this paper uses the off-lattice KMC method to research the Ti-Si-N nanocomposite film, and calculate the influence of deposition temperatures, deposition rate and Si content to the film’s surface roughness, nucleation size and density of initial stage. The results show that with deposition temperature and deposition rate ascend, it can increase transition event, decrease the film’s surface roughness. Si content works on nucleation in initial stage, and the more Si contents, the larger of nucleation rate and the smaller of the grain crystal.

• Periodical: Advanced Materials Research (Volumes 403-408)
• Pages: 3636-3641
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.403-408.3636
• Online since: November 2011
• Authors: Shi Yang Sun, Xue Jie Liu, Xin Tan, Hui Ling Jia, Xiao Feng Tan
• Keywords: Films Growth, KMC, Off-Lattice, Ti-Si-N

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