Transport Properties of Insulated Gate AlInN/InN Heterojunction Field Effect Transistor

Abstract:

As a promising candidate for future high speed devices InN-based heterojunction field effect transistor (HFET) has gained a lot of attention in recent years. However, InN-based devices are still a less studied compared with other III-nitride based devices. This work investigates theoretically, the electron transport properties of insulated gate AlInN/InN Heterojunction Field Effect Transistor. A self-consistent charge control model based on one-dimensional Schrodinger-Poisson equations is developed. The transport properties of the device are calculated using an ensemble Monte Carlo simulation. The device model incorporates an analytical 3-valley band structure with non-parabolicity for all nitride materials. The scattering mechanisms considered are dislocations scattering, impurity scattering, interface roughness, alloy disorder scattering and phonon scattering. The model also takes into account the highly dominant spontaneous and piezoelectric polarization effects to predict the 2DEG sheet charge density more accurately at the heterointerface. The results obtained are agreed well with the literature.

• Periodical: Advanced Materials Research (Volumes 403-408)
• Pages: 64-69
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.403-408.64
• Online since: November 2011
• Authors: Md. Sherajul Islam, Md. Arafat Hossain, Sakib Mohammed Muhtadi, Ashraful G. Bhuiyan
• Keywords: Alinn/InN, Heterojunction, Monte-Carlo Simulation, Polarization, Quantum Confinement Effect

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