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The Time Response of Exponential Doping NEA InGaAs Photocathode Applied to near Infrared Streak Cameras

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Abstract:

An exponential doping NEA InGaAs photocathode is theoretically proposed to apply in the near infrared streak camera. The photocathode time response is calculated and analyzed by using a photoelectron non-steady method. The numerical results show that the excited electrons in the InGaAs active layer is accelerated due to the built-in electric field induced by the exponential doping structure, which shortens the transport time of minority carriers in the photocathode and thus, the time response is greatly improved. In addition, the exponential doping InGaAs photocathode possesses time response of less than 10 picoseconds and near-infrared quantum efficiency of 10%.

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Advanced Materials, ICAMMP 2011 View Preview

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Periodical:

Advanced Materials Research (Volumes 415-417)

Pages:

1403-1406

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.415-417.1403

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Online since:

December 2011

Authors:

Wei Dong Tang, Wen Zheng Yang, Zhi Peng Cai, Chuan Dong Sun

Keywords:

Exponential Doping, InGaAs Photocathode, Near-Infrared (NIR), Streak Camera, Time Response

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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