Preparation and Application of <110> Dislocation-Free Monocrystalline Silicon by CZ Method

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Abstract:

This project studies the impact on ‹110› dislocation-free monocrystal grown by Czochralski method (hereinafter referred to as CZ) through puller's heat zone system and pulling process. Adjusting heat system appropriately, increasing pulling speed sharply, controlling the diameter and length in neck growth, controlling the speed in crown growth, increasing the length and diameter of tail, all of which are key elements to guarantee the success of ‹110› dislocation-free monocrystal pulling. The ‹110› dislocation-free monocrystal we developed under this project can be applied to optoelectronic devices for both semiconductor and solar industry. According to the verifications of the customer, the solar cell manufactured by ‹110› silicon monocrystal has unique features of ultra-thin and high efficiency. Furthermore, it can solve the problem caused by sheltering issue. Compared to traditional solar cell, silicon usage is 3 times less. As a result, it reduces the material cost dramatically.

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Periodical:

Advanced Materials Research (Volumes 415-417)

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1760-1763

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Online since:

December 2011

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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[1] A. Chutinan, N.P. Kherani and Stefan Zukotynski. Opt. Express Vol. 17 (2009), pp.8871-8878

DOI: 10.1364/oe.17.008871

Google Scholar

[2] J.C. Brice. J. Cryst. Growth Vol. 2 (1968), p.395

Google Scholar

[3] N.S. Dellas, B.Z. Liu, S.M. Eichfeld and C.M. Eichfeld. J. Appl. Phys. Vol. 105 (2010), pp.094309-7

Google Scholar

[4] W.C. Dash. J. Appl. Phys. Vol. 45 (1974), p.156

Google Scholar

[5] I. Akihiro, S. Yutaka, S. Ryota, T. Junsuke. U.S. Patent 7,226,506. (2007)

Google Scholar

[6] I. Shuichi. U.S. Patent 2,452,91. (2008)

Google Scholar

[7] S.B. Mallick, M. Agrawal and P. Peumans. Opt. Express Vol. 18 (2010), pp.5691-5706

Google Scholar