Effect of Current on the Interfacial Structures of the Dissimilar Metals Diffusion Bonding

Abstract:

In this paper, the growth process of the interfaces of Mg-Al-Mg and Mg-Cu-Mg diffusion bonding layers which are prepared by the field-active diffusion bonding (FDB) process were investigated. The OM, SEM, EDS and XRD were applied to analyze the microstructure, phase components of the diffusion dissolution layer. The results show that the morphology and width of the diffusion dissolution layer were significantly affected by the electric field strength. At low temperature, the bonding layer was formed through solid state diffusion process, liquid phase existed between the two dissimilar metals at high temperature and eutectic layer was formed at the bonding interface. As for the Mg-Al couples, when the current density was 80Acm-2 the thickness of the transition layer was 120μm which was 12 times higher than current-free condition at 450°C for 50min.

• Periodical: Advanced Materials Research (Volumes 418-420)
• Pages: 1423-1427
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.418-420.1423
• Online since: December 2011
• Authors: Li Fang Hu, Fu Ming Wang, Shao Ping Chen, Qing Sen Meng
• Keywords: Aluminum (Al), AZ31B, Copper, Diffusion, Diffusion Bonding (DB), Electric Field

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