The Preparation of Cu2ZnSnSe4 Films by Selenization of the Oxide Precursors

Gui Lin Chen; Lu Jin; Wei Feng Liu; Guo Shun Jiang; Chang Fei Zhu

doi:10.4028/www.scientific.net/AMR.418-420.597

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 418-420The Preparation of Cu2ZnSnSe4 Films by...

The Preparation of Cu₂ZnSnSe₄ Films by Selenization of the Oxide Precursors

Abstract:

A low-cost non-vacuum process for fabrication of Cu2ZnSnSe4 (CZTSe) films by solvent-free mechanochemical method and spin-coating process is described. First, highly monodisperse Cu, Zn, Sn oxides nanoparticles are synthesized via a facile, solvent-free route. Second, the oxide particulate precursors are deposited in a thin layer by spin-coating technique. Finally, the dry layers are sintered into CZTSe thin films selenization. Through X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), it is found that near stoichiometric CZTSe films with a micron-sized grains are obtained in our work.

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Materials Processing Technology, ICAMMP2011

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Advanced Materials Research (Volumes 418-420)

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597-601

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https://doi.org/10.4028/www.scientific.net/AMR.418-420.597

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Online since:

December 2011

Authors:

Gui Lin Chen, Lu Jin, Wei Feng Liu, Guo Shun Jiang, Chang Fei Zhu

Keywords:

Cu₂ZnSnSe₄, Oxide, Selenziation, Thin Film

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