Preparation and Characterization of Aluminium-Doped SnS Thin Films

Abstract:

Metallic-doping chalcogenide compounds have attracted significant interest in application of photovoltaic devices recently. In this article, Al-doped SnS films with a thickness of about 500 nm have been deposited on glass substrates by thermal evaporation technique. Al-doping concentration (from 0 at. % to 15 at.%) in the SnS films can be controlled accurately by varying Al layer thickness. The effects of Al–doping on the physical properties of the films have been investigated by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-near infrared spectroscopy measurements and Hall effect measurement system. All the films are orthorhombic SnS with preferred (111) crystallites orientation, and they are of p-type conductivity. With the increasing of Al-doping concentration, the evaluated direct band gap Edir of the SnS: Al films decreases from 1.50eV to 1.29eV and the conductivities of the films increase. Therefore, the optical and semiconducting properties of the SnS films have been improved by Al-doping.

• Periodical: Advanced Materials Research (Volumes 418-420)
• Pages: 712-716
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.418-420.712
• Online since: December 2011
• Authors: Shuai Zhang, Shu Ying Cheng, Hong Jie Jia, Hai Fang Zhou
• Keywords: Optical and Electrical Properties, Sns:Al Thin Films, Thermal Evaporation

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