The Design Method of Optimum Field-Plate Structure for HEMTs

Wei Zhou; Jie Wu; Xiang Li; Jie Yang; Su Jing Xia; Tang Wu

doi:10.4028/www.scientific.net/AMR.457-458.1387

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 457-458The Design Method of Optimum Field-Plate Structure...

The Design Method of Optimum Field-Plate Structure for HEMTs

Abstract:

This paper investigated on the optimization design of the AlGaN/GaN High electron mobility transistors (HEMT) with gate terminal field-plate (FPs) structure and proposed an optimization method at a given work conditions, such as drain bias Vd . Though the simulation, we obtain two fitting formula about the FPs thickness tox and the minimum length lmin.

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Periodical:

Advanced Materials Research (Volumes 457-458)

Pages:

1387-1390

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.457-458.1387

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Online since:

January 2012

Authors:

Wei Zhou, Jie Wu, Xiang Li, Jie Yang, Su Jing Xia, Tang Wu

Keywords:

AlGaN/GaN-Based HEMT, Field-Plate, Simulation

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References

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DOI: 10.1109/jproc.2002.1021567

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DOI: 10.1109/jproc.2002.1021567

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