Strain State Evolution and Thickness-Dependent Properties of Epitaxial La_0.7Sr_0.3MnO₃ Thin Films

Abstract:

La_0.7Sr_0.3MnO₃(LSMO) films 35-350nm thick have been grown on (001)LaAlO₃ (LAO) substrates. The strain state evolution was examined fully by x-ray reciprocal space maps, in order to clarify its impact on the thickness-dependent properties of the films. It was found that LSMO epitaxial films have properties which is from partially strained to fully relaxed with film thickness increasing on the same substrate. Resistivity measurement shows that the relaxed film has higher resistivity than that of the strained film, because the relaxed film contains the high deficiency density. In this paper, however, the relaxed property of the same thickness LSMO epitaxial film grown on the different substrates is also discussed.

• Periodical: Advanced Materials Research (Volume 460)
• Pages: 214-217
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.460.214
• Online since: February 2012
• Authors: Ying Meng, Shi Bin Lu, Juan Gao
• Keywords: Angular Distortion, Deficiency Density, Epitaxial Film, Lattice Mismatch, Strain Relaxation

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