Analysis on the Efficient Limiting Factors of N-Type Rear Junction Solar Cells by PC1D Simulation

Hai Ling Li; Lei Zhao; Chun Lan Zhou; Hong Wei Diao; Wen Jing Wang

doi:10.4028/www.scientific.net/AMR.488-489.1380

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Analysis on the Efficient Limiting Factors of N-Type Rear Junction Solar Cells by PC1D Simulation
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 488-489Analysis on the Efficient Limiting Factors of...

Analysis on the Efficient Limiting Factors of N-Type Rear Junction Solar Cells by PC1D Simulation

Abstract:

By conventional production-line process, n-type Al-doped rear junction solar cell could be easily fabricated without any other equipment and process. Since the properties of n-type silicon material are different to that of p-type silicon material and the junction is placed at the back, the process parameters should be optimized theoretically to assess the efficient potential. By modeling cells using PC1D software, the effect of some process parameters on the properties of n-type base solar cells were studied, including base resistivity, bulk lifetime, front surface field and recombination rate of front surface. The key parameters were identified and the potential industrial efficiency was calculated.

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Periodical:

Advanced Materials Research (Volumes 488-489)

Pages:

1380-1384

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.488-489.1380

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Online since:

March 2012

Authors:

Hai Ling Li, Lei Zhao, Chun Lan Zhou, Hong Wei Diao, Wen Jing Wang

Keywords:

n-Type, PC1D, Rear Junction, Solar Cell

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