Radiation Effect of MOS Structure Irradiated by 0.8MeV Electron Beam

Abstract:

Metal-oxide-semiconductor (MOS) structure is highly sensitive to SiO₂-Si interface. It will reflect parameters such as interface density and oxide layer charge expediently. For the sake of researching of radiation effect of MOS structure irradiated by electron, we adopted 0.8 MeV electron at dosage between 2×10¹³ cm^-2~1×10¹⁴ cm^-2 as radiation source respectively. We found that electron radiation will induce interface density at SiO₂-Si interface. According to comparison with C-V curve of MOS structure at high frequency and low frequency, we obtain that the experimental data of interface density is up to 10¹⁴(cm^-2eV^-1). In addition, we also obtain the relationship between the parameter and radiation dosage.

• Periodical: Advanced Materials Research (Volumes 516-517)
• Pages: 1917-1920
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.516-517.1917
• Online since: May 2012
• Authors: Jian Xin Zhang, Jun Xing Liu, You Bao Wan, Ying Hui Sun
• Keywords: Electron Radiation, Interface Density, MOS Structure

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