Preparation and Properties of Si3N4 Based Composites for Broad Band Radomes

Ming Li Li; Qiong Yu; Ying Xu; Chun Jiang Zhou; Zi Cheng Qi; Qing Guo Lu

doi:10.4028/www.scientific.net/AMR.532-533.57

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 532-533Preparation and Properties of Si3N4 Based...

Preparation and Properties of Si₃N₄ Based Composites for Broad Band Radomes

Abstract:

A new preparation method was developed to produce Si₃N₄-SiO₂-Si₂N₂O composites for broad band radome applications. The three-dimensional cross-linked polyphenylsiloxane (PPS) was used as an organic precursor. The composites obtained through react bonding between Si and the precursor powders in the stream of N₂ were examined. The conversion of the PPS polymer to the ceramic was examined by TG analysis and conventional X-ray diffraction (XRD) techniques. It was found that the ceramics contained a primary Si₂N₂O phase, some β-Si₃N₄ phase and a minor α-SiO₂ phase. Despite low density (1.7-2.0g•cm^-3), the flexural strengths of the composites reaches 195Mpa at room temperature. The ceramic has excellent dielectric properties with dielectric constants as low as 3.2-5.5.

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Periodical:

Advanced Materials Research (Volumes 532-533)

Pages:

57-60

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.532-533.57

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Online since:

June 2012

Authors:

Ming Li Li, Qiong Yu, Ying Xu, Chun Jiang Zhou, Zi Cheng Qi, Qing Guo Lu

Keywords:

Dielectric Property, Organic Precursor, Si₃N₄-SiO₂-Si₂N₂O Composites, Strength

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