FE Based Thermal Analysis of Void Effect in IGBT Mechanical Module

Xin Yu Fang; Xiao Ling Zhang; Wei Hua Gong; Jian Zhang

doi:10.4028/www.scientific.net/AMR.548.415

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 548FE Based Thermal Analysis of Void Effect in IGBT...

FE Based Thermal Analysis of Void Effect in IGBT Mechanical Module

Abstract:

In this paper, a reasonable model under the thermal void effect of the Insulate Gate Bipolar Transistor is been built. Finite element analysis (FE) is introduced to analyze thermal characteristics of the model. The results indicate that the heat distribution of IGBT is determined of voids with different sizes, positions and the intensity. Besides, the synergy of void effect and heat coupling effect would significantly increase the temperature of the chip.

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Periodical:

Advanced Materials Research (Volume 548)

Pages:

415-420

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.548.415

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Online since:

July 2012

Authors:

Xin Yu Fang, Xiao Ling Zhang, Wei Hua Gong, Jian Zhang

Keywords:

Finite Element Analysis (FEA), Insulated Gate Bipolar Transistor (IGBT), Solder Void, Thermal Distribution

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