An Improved TB Method for the AlGaN/GaN Superlattice

Jun Feng Chen; Xiang Zhen Yu

doi:10.4028/www.scientific.net/AMR.549.41

Paper Titles

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 549An Improved TB Method for the AlGaN/GaN...

An Improved TB Method for the AlGaN/GaN Superlattice

Abstract:

The tradition energy dispersion model can not match the experiment results of the AlGaN/GaN superlattice with strong polarization effect. Thus we propose a new dispersion model from the improved tight binding method. In this model, the couple of wavefunctions from more potential wells are considered. To a AlGaN/GaN superlattice with 1.5nm well length, 1nm barrier length and 25% Al content, the calculation result shows that the improved model are much more precise than the tradition model. This improved dispersion model can be used in the study of the nonlinear transport of AlGaN/GaN superlattice.

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Advanced Materials Research (Volume 549)

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41-44

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.549.41

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Online since:

July 2012

Authors:

Jun Feng Chen, Xiang Zhen Yu

Keywords:

GaN, Superlattice, Terahertz

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