Step and Domain Boundary Effect of Surface Reconstruction to Si(111)-√ 3×√3-Ag

Abstract:

The influence of step and domain boundary on growth of Si(111)-√ 3×√3-Ag has been studied in situ using optical surface second-harmonic generation and low energy electron diffraction. The second harmonic intensity shows a difference of about 50% for Si(111) surfaces with different miscut angles and domain boundary densities, although no significant difference has been observed in low energy electron diffraction patterns, indicating a significant impediment to the growth of Si(111)-√ 3×√3-Ag by step and domain boundaries. Simulation results reveal a 90% coverage of Si(111)-√ 3×√3-Ag on the vicinal substrate with an miscut angle of 0.41o, consistent with the dynamics of Ag atoms on Si(111)-7×7 surface. The influence of two dimentional adatom gas on surface structure has also been discussed.

• Periodical: Advanced Materials Research (Volumes 554-556)
• Pages: 357-361
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.554-556.357
• Online since: July 2012
• Authors: Dong Mei Deng, Li Na Sun, Yu Rong Dai, Shi Xun Cao, Li Hua Bai, Li Qiang Luo, Jin Cang Zhang
• Keywords: √ 3×√3-Ag, Domain Boundary, Second-Harmonic Generation, Si(111), Step

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