Effect of the ZnO Buffer Layer Thickness on AZO Film Properties

Cheng Hua Sui; Bin Liu; Tian Ning Xu; Bo Yan; Gao Yao Wei

doi:10.4028/www.scientific.net/AMR.562-564.81

Paper Titles

An Electrochromic Copolymer Based on Pyrrole and 3,4-Ethylenedioxythiophene Electrodeposited in Aqueous Micellar Solution
p.64

Oxidation of U71Mn Steel under Pure Oxygen
p.68

Influence of Substituting La with Zr on Electrochemical Characteristics of As-Spun RE–Mg–Ni-Based A₂B₇-Type Alloys
p.72

Corrosion of Biodegradable Implant Mg-2Ca-xZn Alloy in Simulated Body Fluid with the Addition of Zn
p.77

Effect of the ZnO Buffer Layer Thickness on AZO Film Properties
p.81

Kinetic Study for Ion Exchange of Taurine on D290 Anion Exchange Resin
p.85

Long Term Reliability and Power Degradation Analysis of Multicrystalline Silicon Solar Modules Using Electroluminescence Technique
p.90

Gold Nanoparticle Aggregates Preparation by (3-aminpopropyl)- Trimethoxysilane for Highly Active SERS Substrates
p.94

Study on the Conductive Filament Formation of HfO₂
p.98

HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 562-564Effect of the ZnO Buffer Layer Thickness on AZO...

Effect of the ZnO Buffer Layer Thickness on AZO Film Properties

Abstract:

To evaluate the influence of the ZnO buffer layer thickness on structural, electrical and optical properties of ZnO: Al (AZO)/ZnO bi-layer films, a series of AZO/ZnO films were deposited on the quartz substrates by electron beam evaporation. X-ray diffraction measurement shows that the crystal quality of the films is improved with the increase of the film thickness. The electrical properties results show that the resistivity decreases initial and then increases. However, optical transmittance of all the films is >80% regardless of the buffer layer thickness in the visible region. The results illustrate that the insertion of ZnO buffer layer can improve the film performance.

You might also be interested in these eBooks

Materials Engineering and Automatic Control

View Preview

Info:

Periodical:

Advanced Materials Research (Volumes 562-564)

Pages:

81-84

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.562-564.81

Citation:

Cite this paper

Online since:

August 2012

Authors:

Cheng Hua Sui, Bin Liu, Tian Ning Xu, Bo Yan, Gao Yao Wei

Keywords:

Al Concentration, AZO, Deposition Time, ZnO Buffer Layer

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] V. Gupta, A. Mansingh, Influence of postdeposition annealing on the structural and optical properties of sputtered zinc oxide film, J. Appl. Phys. 80 (1996) 1063-1073.

DOI: 10.1063/1.362842

Google Scholar

[2] K. -S. Weibenrieder, J. Muller, Conductivity model for sputtered ZnO-thin film gas sensors, Thin Solid Films. 300 (1997) 30-41.

DOI: 10.1016/s0040-6090(96)09471-0

Google Scholar

[3] A. E. Manouni, F. J. Manjón, M. Mollar, B. Marí, R. Gómez, M. C. López, J. R. Ramos-Barrado, Effect of aluminium doping on zinc oxide thin films grown by spray pyrolysis, Superlattices. Microstruct. 39 (2006) 185-192.

DOI: 10.1016/j.spmi.2005.08.041

Google Scholar

[4] H. M. Suarez, A. Maldonado, M. D. L. Olvera, A. Reyes, R. C. Perez, G. T. Delgado, R. Asomoza, ZnO: Al thin films obtained by chemical spry: effect of the Al concentration, Appl. Surf. Sci. 193 (2002) 52-59.

DOI: 10.1016/s0169-4332(02)00011-9

Google Scholar

[5] A. Suzuki, T. Matsushita, N. Wada, Y. Sakamoto, M. Okuda, Transparent Conducting Al-Doped ZnO Thin Films Prepared by Pulsed Laser Deposition, J. Appl. Phys. 35 (1996) L56- L59.

DOI: 10.1143/jjap.35.l56

Google Scholar

[6] M. Chen, Z. L. Pei, C. Sun, and S. Wen, Structural, electrical, and optical properties of transparent conductive oxide ZnO: Al films prepared by dc magnetron reactive sputtering, J. Vac. Sci. Technol. 19 (2001) 963-970.

DOI: 10.1116/1.1368836

Google Scholar

[7] K. H. Bang, D. K. Hwang, and J. M. Myoung, Effect of ZnO buffer layer thickness on properties of ZnO thin films deposited by radio-frequency magnetron sputtering, Appl. Surf. Sci. 207 (2003) 359-364.

DOI: 10.1016/s0169-4332(03)00005-9

Google Scholar

[8] S. W. Shin, K. U. Sim, S. M. Pawar, A. V. Moholkar, I. O. Jung, J. H. Yun, J. H. Moon, J. H. Kim, J. Y. Lee, Effect of a ZnO buffer layer on the properties of Ga-doped ZnO thin ﬁlms grown on Al2O3 (0001) substrates at a low growth temperature of 250 degrees C, J. Cryst. Growth. 312 (2010).

DOI: 10.1016/j.jcrysgro.2010.02.013

Google Scholar

[9] Z. Y. Zhang, C. G. Bao, S. Q. Ma, S. Z. Hou, Effect of crystallinity of ZnO buffer layer on the properties of epitaxial (ZnO: Al)/(ZnO: Ga) bi-layer ﬁlms deposited on c-sapphire substrate, Appl. Surf. Sci. 257 (2011) 7893–7899.

DOI: 10.1016/j.apsusc.2011.04.070

Google Scholar