Construction of High-Quality P-Type ZnSe Nanowires/n-Type Si Heterojunctions and their Nano-Optoelectronic Applications

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We report a simple and low-cost method for constructing high-quality p-type ZnSe nanowires/n-type Si heterojunction by growing p-type ZnSe:N nanowires on n-type Si substrate. The heterojunction shows excellent stability and reproducibility to white light irradiation with a fast response time (103). And the photovoltaic characteristics of it exhibit a fill factor of about 24% and a high power conversion efficiency of 0.89%.

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31-34

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September 2012

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© 2012 Trans Tech Publications Ltd. All Rights Reserved

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