Experiment Investigation of the Temperature Characteristics of 975nm SLD

Hong Bo An; Bing Hua Su; Li Hong Niu

doi:10.4028/www.scientific.net/AMR.588-589.761

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 588-589Experiment Investigation of the Temperature...

Experiment Investigation of the Temperature Characteristics of 975nm SLD

Abstract:

The output optical power and spectra of a 975 nm semiconductor laser diode (SLD) were measured and analyzed when the SLD was operated with different current in the temperature range of -10°C—65°C. The results showed that the output center wavelength of the SLD shifts in the direction of long wavelength as the operation current and temperature rises. The slopes were approximately 0.24nm/100mA and 0.36nm/°C, respectively. Furthermore, the Conversion efficiency of the SLD was higher when the temperature was low. The reasons for the red shift of SLD was theoretical analyzed.

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Advanced Materials Research (Volumes 588-589)

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761-764

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.588-589.761

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November 2012

Authors:

Hong Bo An, Bing Hua Su, Li Hong Niu

Keywords:

Operation Current, Red Shift, SLD, Temperature

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