Influence of Annealing Time on the Properties of GZO Thin Films Fabricated by Direct Current Magnetron Sputtered

Abstract:

The films were deposited on glass slide substrates by DC magnetron sputtering method by using a ZnO target doped with Ga2O3 of 3wt%, then annealing processing were implemented respectively under the temperature of 250 °C with the time of 0,30,60,90 and 120 minutes.Effects of sputtering on the structural and optical and electrical properties of GZO films had been investigated. The results showed that GZO films with high quality could be fabricated after vacuum-annealed. crystal face of GZO films had a good tendency of c axis. the (002) diffraction peak reached a maximum at the annealing time of 1.5 hours; at the same time ,crystal grain became larger and crystal boundaries narrow, film’s resident stress reduced to 0.5 Mpa.With the annealing time increasing, the resistivity of GZO films decreased and reached the minimum which was 9.1×10^-4 Ω·cm at 1.5 hours. While the average transmittance decreased sharply after the time of 1.5 hours in visible region. Consequently, the best annealing time is 1.5 hours.

• Periodical: Advanced Materials Research (Volumes 602-604)
• Pages: 1503-1507
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.602-604.1503
• Online since: December 2012
• Authors: Xia Wu, Hui Dong Yang, Ji Sen Zhang, Long Gu
• Keywords: (002)Diffraction Peak, Annealing Processing, GZO Film, Resident Stress

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