Theoretical Study on the Interaction between Shuffle 60° Dislocation and Hexavacancy in Silicon

Kang You Zhong; Qing Yuan Meng; Zhi Fu Yang

doi:10.4028/www.scientific.net/AMR.602-604.861

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 602-604Theoretical Study on the Interaction between...

Theoretical Study on the Interaction between Shuffle 60° Dislocation and Hexavacancy in Silicon

Abstract:

The interaction of the shuffle 60° dislocation with a regular chain of hexavacancies was investigated via the molecular dynamics simulation with Stillinger-Weber potential. The results show that an attraction exists between the shuffle 60° dislocation and hexavacany. The attraction energy is dependent obviously upon the hexavacancy concentration. The dislocation can overcome the pinning of vacancies under a critical resolved shear stress, and a linear relationship is found between the critical stress and hexavacancy concentration.

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Advanced Materials Research (Volumes 602-604)

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861-865

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.602-604.861

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Online since:

December 2012

Authors:

Kang You Zhong, Qing Yuan Meng, Zhi Fu Yang

Keywords:

Critical Shear Stress, Dislocation-Hexavacancy Interaction, Hexavacancy Density, Molecular Dynamics (MD) Simulation, Silicon

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