Structural Amelioration of 920 Nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)

Xue Mei Liang; Li Jun Wang; Yong Qiang Ning; Yun Liu

doi:10.4028/www.scientific.net/AMR.614-615.1278

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 614-615Structural Amelioration of 920 Nm Optically Pumped...

Structural Amelioration of 920 Nm Optically Pumped Semiconductor Vertical External-Cavity Surface Emitting Laser (OPS-VECSEL)

Abstract:

920 nm optically pumped semiconductor vertical external-cavity surface emitting laser (OPS-VECSEL) has an important application in laser display. We constructed and optimized a 920 nm OPS-VECSEL with active region of In0.09Ga0.91As quantum well (QW) system pumped by 808 nm laser diode module. By the finite element method, self-consistent solutions of the semiconductor electronic and optical equations are realized to calculate the characteristics parameters of OPS-VECSEL. The performances of device especially the mode, the threshold and the optical-optical translation efficiency were analyzed by dealing with different number of QWs (1, 2 and 3) in one period, QW depth, barrier width, the component and dimension of the non-absorption layer. We chose an improved structure of them. On this basis, we ameliorated the number of QW periods and the simulation showed that in order to obtain high performance device, the choice of the number of QW periods must be cautious.

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Periodical:

Advanced Materials Research (Volumes 614-615)

Pages:

1278-1281

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.614-615.1278

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Online since:

December 2012

Authors:

Xue Mei Liang, Li Jun Wang, Yong Qiang Ning, Yun Liu

Keywords:

Finite Element, Optically Pumped, Semiconductor Lasers, Structural Amelioration, Vertical External-Cavity Surface Emitting Laser

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References

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