Prepared for GaAs PHEMT Material

Yan Lei Li; Rui Xia Yang

doi:10.4028/www.scientific.net/AMR.619.594

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Prepared for GaAs PHEMT Material
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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 619Prepared for GaAs PHEMT Material

Prepared for GaAs PHEMT Material

Abstract:

In this paper, GaAs PHEMT samples are prepared by the method of molecular beam epitaxy (MBE), The optimal parameters are determined by studying the impact of the barrier layer thickness, spacer layer thickness, Al composition of the barrier layer and the spacer layer , the channel thickness and channel In composition on Ns and μn.

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Periodical:

Advanced Materials Research (Volume 619)

Pages:

594-597

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.619.594

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Online since:

December 2012

Authors:

Yan Lei Li, Rui Xia Yang

Keywords:

Component Optimization, GaAs Materials, Molecular Beam Epitaxy, Pseudomorphic High Electron Mobility Transistors (PHEMT)

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References

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