Intermetallic Evolution of Sn-3.5Ag-1.0Cu-0.1Zn/Cu Interface under Thermal Aging

Article Preview

Abstract:

Due to environmental concerns, lead-free solders were introduced in replacing the lead-based solders in microelectronics devices technology. Although there are many lead-free solder available, the Sn-Ag-Cu is considered the best choice. But the solder has its draw backs in terms of melting temperature and intermetallic formations. To improve the solder, a fourth element Zn was added into the solder. The new composite solders were synthesized via powder metallurgy route. This research studies the effect of 0.1wt% Zn addition on the hardness and intermetallic formation on Cu substrate. For the hardness results, the micro Vickers values were reported. For intermetallic, the solders were melted at 250°C and aged at 150°C until 400 hours. The microhardness value for Zn based composites solder shows higher micro Vickers hardness compared to un-doped counterparts. The phases formed and its growth was studied under SEM and by energy dispensive x-ray (EDX). The SEM results show the presence of Cu6Sn5 and Cu3Sn intermetallics and the Cu5Zn8 intermetallic was not detected. The addition of 0.1wt% Zn has retarded the growth of the Cu3Sn intermetallic but not the total intermetallic thickness.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

142-146

Citation:

Online since:

December 2012

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] H. Y. Song, Q. S. Zhu, Z. G. Wang, J. K. Shang and M. Lu: Materials Science and Engineering: A Vol. 527 (2010), pp.1343-1350.

Google Scholar

[2] D. Q. Yu, J. Zhao and L. Wang: Journal of Alloys and Compounds Vol. 376 (2004), pp.170-175.

Google Scholar

[3] F. J. Wang, Z. S. Yu and K. Qi: Journal of Alloys and Compounds Vol. 438 (2007), pp.110-115.

Google Scholar

[4] M. A. A. Mohd Salleh, M. H. Z. Hazizi, Z. A. Ahmad, K. Hussin and K. R. Ahmad: Advance Material Research Vol. 277 (2011), pp.106-111.

Google Scholar

[5] M. Kamal and E. Gouda: Journal of Materials Science: Materials in Electronic Vol. 19 (2008), pp.81-84.

Google Scholar

[6] H. K. Kim, H. K. Liou and K. N. Tu: Applied Physics Letters Vol. 66 (1995), pp.2337-2339.

Google Scholar

[7] R. Mayappan, A. B. Ismail and Z. A. Ahmad: Journal of Nuclear and related Technologies Vol. 6 (2009), pp.165-172.

Google Scholar

[8] R. Mayappan: Advanced Materials Research Vol. 501 (2012), pp.150-154.

Google Scholar

[9] H. R. Kotadia, O. Mokhtari, M. P. Clode, M. A. Green and S. H. Mannan: Journal of Alloys and Compounds Vol. 511 (2012), pp.176-188.

Google Scholar

[10] M. G. Cho, S. K. Kang, D. Y. Shih and H. M. Lee: Journal of Electronic Materials Vol. 36 (2007), pp.1501-1509.

Google Scholar

[11] S. K. Kang, D. Leonard, D. Y. Shih, L. Gignac, D. W. Henderson, S. Cho and J. Yu: Journal of Electronic Materials Vol 35 (2006), pp.479-485.

Google Scholar