Optical Band Gap of Wurtzite Zinc Sulphide Doped with Lanthanum Ions

George Varughese; Sreeja R. Aswathy; K.T. Usha; A.S. Kumar

doi:10.4028/www.scientific.net/AMR.622-623.752

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 622-623Optical Band Gap of Wurtzite Zinc Sulphide Doped...

Optical Band Gap of Wurtzite Zinc Sulphide Doped with Lanthanum Ions

Abstract:

Pure and doped Zinc Sulfide (ZnS) quantum dots have attracted increasing interest from researchers working on various scientific and engineering applications in electronics, nonlinear optical devices for communication, and optical computers. In this study, ZnS nanoparticles doped with lanthanum (ZnS:La) with approximately 11 nm size was produced at 150°C by chemical precipitation route. Zinc Sulphide is an extensively studied group II-VI semiconductor with wide application in field of Photo Luminescence (PL),Electro Luminescence(EL) and Cathodo Luminescence (CL). It is an excellent light transmission material with high refractive index 2.27. XRD, SEM, FTIR UV-Vis and EDS characterize the samples.In this study, the UV–Visible absorption spectra of ZnS:La showed a red shift in the absorption shoulder compared with the spectra of undoped samples. ZnS nanoparticles could be doped with lanthanum ions during synthesis without altering the X-ray diffraction (XRD) patterns of ZnS. Also, the XRD pattern of the powders showed cubic crystal structures for ZnS:La. The Optical band gap has been found to be 2.7 eV. It was found that energy Band gap Eg decreases with doping of La.

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Advanced Materials Research (Volumes 622-623)

Pages:

752-756

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.622-623.752

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Online since:

December 2012

Authors:

George Varughese, Sreeja R. Aswathy, K.T. Usha, A.S. Kumar

Keywords:

Doping, Lanthanum, Nanocrystal, Zinc Sulphide

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References

[1] .A.L. Efros and M. Rosen, The electronic structure of semiconductor nanocrystals, Annu. Rev. Mater. Sel. 36, (2003), pp.475-521.

Google Scholar

[2] K. Havanseak, Nanotechnology at present and its promises in the future, Materials Science Forum, 414-415, (2003). pp.85-94.

Google Scholar

[3] J. Dutta and A. Sugunan, colloidal self organisation for nanoelectronics, in B.Y. Majlis, and S. Shaari (Ed) IEEE international conference on semiconductor electronics, p. A6-A11, KualaLampur (2004).

DOI: 10.1109/smelec.2004.1620822

Google Scholar

[4] B.D. Gates,Q. Xu, L.C. Love, D.B. Wolfe and G.M. Whitesides, Unconventional nanofabrication, Annu. Rev. Mater. Res., 34, (2004). pp.339-372.

DOI: 10.1146/annurev.matsci.34.052803.091100

Google Scholar

[5] B.D. Cullity, Elements of X-ray Diffraction, Second Edition, Addison Wiley. Publishing Co (1978).

Google Scholar

[6] Zhong Lin Wang (ED. ), Characterization of Nanophase Materials, Wiley-Vch, Verlag (2000).

Google Scholar

[7] Noor Shahima Begum, H. M Farweez Ahmed, Bull. Mat. Sci. 31, 1, ( 2008), pp.73-82.

Google Scholar

[8] Pratima Ctauhao, S Annapoorni and S. K Trikha. Bull. Mater. Sci. 21, 5, (1998), pp.381-385.

Google Scholar

[9] P.E. Lappen and m. Lannoo. Calculation of band gap for small CdS and ZnS. Physical Review B, 39, 15 (1989). pp.423-27.

Google Scholar

[10] Nobert Adolph lange and Gordon M. Forker B. S Hand book of Chemistry.

Google Scholar

[11] K.K. Nanda F.E. Kruis and H. Hassan Phys. Rev. Lett., 89, (2002), p.256103.

Google Scholar