The Effect of Substrate Temperatures on the Structural and Optical Properties of Cosputtered ZnO and AlN Thin Films

A. Ismail; Mat Johar Abdullah

doi:10.4028/www.scientific.net/AMR.626.25

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 626The Effect of Substrate Temperatures on the...

The Effect of Substrate Temperatures on the Structural and Optical Properties of Cosputtered ZnO and AlN Thin Films

Abstract:

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. For AlN doped ZnO at RF powers of 200 W (ZnO target) and 200W (AlN target), the ZnO (002) peak showed the highest intensity at the substrate temperature of 400˚ C. The prepared films showed good transmission of above 72 % in the visible range. The calculated values of energy band gaps were in the range (3.42 eV - 3.54 eV) for the films prepared at different substrate temperatures.

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Periodical:

Advanced Materials Research (Volume 626)

Pages:

25-28

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.626.25

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Online since:

December 2012

Authors:

A. Ismail, Mat Johar Abdullah

Keywords:

Doped Zinc Oxide, Optical Property, X-Ray Diffraction (XRD)

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References

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