The Study of Silica Sol with Great Particle Size for the SiO2 Dielectric CMP

Juan Wang; Ming Sun; Xia Jiang; Yan Zhang

doi:10.4028/www.scientific.net/AMR.652-654.2228

Paper Titles

Study on Micro-Topography Characteristics of EDM Surface
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A Kind of Optimization Model on Turning Process Based on Productivity and Cost
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Recent Development of Parameter Optimization for Metal Cutting and Grinding Processes
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Research on Tool Wear Rate of Powder Mixed near Dry Electrical Discharge Machining
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The Study of Silica Sol with Great Particle Size for the SiO₂ Dielectric CMP
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Analysis of the Vibration Mechanism in the Turn-Milling Machining of Micro-Miniature Shafts
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Atmospheric TIG Arc Diagnostics with a Low Disturbance Electrostatic Probe
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Corrosion Resistance Prediction of Laser Tailor-Welded Blank Based on Partial Least Square
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Distribution of Magnetic Flux Density and Magnetic Force in EMR
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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 652-654The Study of Silica Sol with Great Particle Size...

The Study of Silica Sol with Great Particle Size for the SiO₂ Dielectric CMP

Abstract:

The most widely used Chemical Mechanical Polishing (CMP) process and most difficulty is the SiO2 dielectric CMP in ULSI. SiO2 cannot be removed by oxidation-reduction because Silicon is already quadrivalence. So we adopt water-solubility SiO2 growing directly from water which size can arrive 110~130nm to improve the polishing rate. The growth of silica sol is studied and the silica sol whose particle sizes can reach 120nm is gained.