Effect of Bi Doping on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Compound
The single phase of Bi-doped Mg2Si0.5Sn0.5 compounds have been successfully fabricated by solid state reaction-spark plasma sintering (SPS). The effect of Bi doping concentration on the thermoelectric properties of Mg2Si0.5Sn0.5 is mainly investigated. The doping of Bi atom introduces impurity energy to Mg2Si0.5Sn0.5 compounds, which results in the increase of carrier concentration ( ), meanwhile it causes the increase of crystal distortion, enhancing the scatter of phonon. The results show that with the increasing of Bi doping content, the electrical conductivity (σ) increase, the absolute Seebeck coefficient ( ) and thermal conductivity ( ) decrease slightly in the measuring temperature range between 300 K and 800K. When the doping concentration of Bi is up to 2.5at% (nominal molar percent), the sample shows a maximum value of the figure of merit, ZT, is 0.78 at 800K.
Takashi Goto, Yibing Cheng, Zhengyi Fu and Lianmeng Zhang
W. J. Luo et al., "Effect of Bi Doping on the Thermoelectric Properties of Mg2Si0.5Sn0.5 Compound", Advanced Materials Research, Vol. 66, pp. 33-36, 2009