Epitaxial Graphene Growth on 6H-SiC (0001) Substrate by Confinement Controlled Sublimation of Silicon Carbide

Abstract:

Large area epitaxial graphene (EG) layers are synthesized on 6H-SiC (0001) by annealing at 1500 °C for 5 min in a closed graphite chamber at low vacuum of 10-3 mbar and its 2D band in Raman spectra can be satisfactorily fitted by a single Lorentzian. From Raman spectroscopy, measurements indicate that too high growth temperature is to the disadvantage of the formation of graphene. The results of atomic force microscope (AFM) and field-emission scanning electronic microscope (FE-SEM) reveal the surface morphology of graphene is related with its growth temperature.

• Periodical: Advanced Materials Research (Volume 709)
• Pages: 62-65
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.709.62
• Online since: June 2013
• Authors: Tian Min Lei, Peng Fei Deng, Yu Ming Zhang, Hui Guo
• Keywords: 6H-SiC Substrates, Graphene (GR), Morpholoy, Raman Spectroscopy

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