The Spontaneous Radiation of Verticalcavity Semiconductor Optical Amplifiers in Bistable Effect

Article Preview

Abstract:

A bistable model is established including the effect of spontaneous emission in a vertical cavity semiconductor optical amplifier (VCSOA). The sensitivities to the amplified spontaneous emission (ASE) of the bistable characteristics in a VCSOA and a traditional edge emitting SOA are compared by numerical analysis. The control of the bistable characteristics and the degeneration of the bistability hysteresis are also analyzed by utilizing the modified model.

You might also be interested in these eBooks

Info:

Periodical:

Advanced Materials Research (Volumes 712-715)

Pages:

1807-1810

Citation:

Online since:

June 2013

Authors:

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2013 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] LI X F, PAN W, LUO B, et al. Theoretical study on controlling nonlinear behaviors of a coupled-

Google Scholar

[2] Cavity VCSEL by external optical injection[J]. Chinese Optics Letters, 2004, 2(5): 278-281.

Google Scholar

[3] Wang G, LUO B, PAN W, et al. A Transfer-Mat-

Google Scholar

[4] Rix Based Analysis of Vertical-Cavity Semicon-

Google Scholar

[5] Ductor Optical Amplifiers[J]. Chinese Optics Letters, 2005, 22(10): 2561-2564..

Google Scholar

[6] A. H. Clark, S. Calvez, N. Laurand, et al. Long-Wavelength Monolithic GaInNAs Vertical-

Google Scholar

[7] Cavity Optical Amplifiers [J]. IEEE J. Quantum Electron. , 2004, 40(7): 878~883.

Google Scholar

[8] Q. Chen, G. D. Cole, E. S. Bjorlin, et al. First Demonstration of a MEMS Tunable Vertical-

Google Scholar

[9] Cavity SOA [J]. IEEE Photon . Technol . Lett. , 2004, 16(6): 1438~1440.

Google Scholar