An Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer

Phasapon Manosukritkul; Amonrat Kerdpardist; Montree Saenlamool; Ekalak Chaowicharat; Amporn Poyai; Wisut Titiroongruang

doi:10.4028/www.scientific.net/AMR.717.158

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 717An Improvement of the Breakdown Voltage...

An Improvement of the Breakdown Voltage Characteristics of NPT-TIGBT by Using a P-Buried Layer

Abstract:

In this paper, we introduced a P-buried (P_b) layer under trench gate which relieved the electric field crowding in the Non Punch Through Trench gate Insulated Gate Bipolar Transistor (NPT-TIGBT) structure. The P_b layer, with carrier concentration of 5x10¹⁶ cm^-3, was created underneath the trench gate within the n-drift layer. In this way, the concentration of electric field at the trench bottom corner decreased. As a result, the breakdown voltage characteristics of NPT-TIGBT improved. The structures were proposed and verified by T-CAD Sentuarus simulation. From the simulation results, the breakdown voltage increased by approximately 30% compared with conventional NPT-TIGBT.

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Periodical:

Advanced Materials Research (Volume 717)

Pages:

158-163

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.717.158

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Online since:

July 2013

Authors:

Phasapon Manosukritkul, Amonrat Kerdpardist, Montree Saenlamool, Ekalak Chaowicharat, Amporn Poyai, Wisut Titiroongruang

Keywords:

Electric Field Crowding, Insulated Gate Bipolar Transistor, T-CAD Sentuarus Simulation, Trench Gate

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