The Investigation of a New NO2 OTFT Sensor Based on Heterojunction F16CuPc/CuPc Thin Films

Bo Zhang; Hui Ling Tai; Guang Zhong Xie; Xian Li; Huan Na Zhang

doi:10.4028/www.scientific.net/AMR.721.159

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 721The Investigation of a New NO2 OTFT Sensor Based...

The Investigation of a New NO₂ OTFT Sensor Based on Heterojunction F₁₆CuPc/CuPc Thin Films

Abstract:

The bottom contact heterojunction organic thin film transistors (OTFTs) based on n-type hexadecafluorophthalocyaninatocopper (F₁₆CuPc) and p-type copper phthalocyanine (CuPc) bilayer were developed by the vacuum evaporation, which were applied to detect nitrogen dioxide (NO₂). The sensors with different thickness (5nm, 10nm, 15nm and 20nm) of CuPc were prepared to investigate the influence of CuPc film thickness on the properties of devices. The results showed that four parameters including the source-drain current (I_DS), grid current (I_GS), threshold voltage (V_T) and carrier mobility (μ) changed in a few seconds when the sensors were exposed to the atmosphere of NO₂. Further more, I_DS and I_GS presented extremely similar variation trend. So the grid current would be taken as a new parameter to reveal the response characteristic of OTFT gas sensor. By comparison, the device with 15nm CuPc thin film exhibited the optimum electronic and gas sensing properties.

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Periodical:

Advanced Materials Research (Volume 721)

Pages:

159-163

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.721.159

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Online since:

July 2013

Authors:

Bo Zhang, Hui Ling Tai, Guang Zhong Xie, Xian Li, Huan Na Zhang

Keywords:

F₁₆CuPc/CuPc, Grid Current, Heterojunction, No₂, OTFT

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