Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

Yu Fei You; C.H. Xu; Jing Zhe Wang; Jun Peng Wang

doi:10.4028/www.scientific.net/AMR.734-737.2328

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 734-737Preparation of PST Ferroelectric Thin Films by...

Preparation of PST Ferroelectric Thin Films by Sol-Gel Process

Abstract:

Sol-gel method is used for the formation of Pb_0.499Sr_0.499TiO₃ (PST)thin films. The initial films were prepared with spin coating sol solution on silicon wafer and drying at room temperature and then heating coated dry sol film at 400°C for 10min. This process was repeated for 1-4 times to obtain 4 initial films with different thicknesses. The 4 initial films were annealed at 700°C for 2h to obtain PST ceramics films. The morphologies of the surface and cross-section of PST films were observed with a scanning electronic microscope (SEM). The phase structures of PST films were analyzed using X-ray diffraction meter (XRD). Experimental results show that PST film prepared by coating sol on silicon with different thicknesses can be high smooth,uniform and compact film.

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Periodical:

Advanced Materials Research (Volumes 734-737)

Pages:

2328-2331

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.734-737.2328

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Online since:

August 2013

Authors:

Yu Fei You*, C.H. Xu, Jing Zhe Wang, Jun Peng Wang

Keywords:

Piezoelectric Materials, PST Ferroelectric Thin Films, Sol-Gel

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