Study on the Enhanced Visible Photocatalysis Activity in Transition Metal Doped ZnS

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Abstract:

The electronic structure and optical properties of pristine and Pd-doped or Ag-doped zinc blende ZnS were calculated with the ab-initio ultrasoft pseudopotential plane wave approximation method based on density functional theory (DFT). The results show that doping significantly alters the system band structure and the electronic density of states (DOS), effectivly enhancing the ZnS optical response and the photocatalytic activity in the visible light range. The microscopic mechanism shows that ZnS photocatalysis efficiency is observably improved through doping.

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Advanced Materials Research (Volumes 734-737)

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2351-2355

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August 2013

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© 2013 Trans Tech Publications Ltd. All Rights Reserved

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[1] X.B. Chen, S.H. Shen, L.J. Guo and Samuel S.Mao: Chem. Rev. Vol.110 (2010), P.6503–6570

Google Scholar

[2] G.J. Liu, Z.H. Zhou and L.J. Guo: Chemical Physics Letters. Vol.509 (2011), P.43–47

Google Scholar

[3] Rajneesh Mohan, Karthikeyan Krishnamoorthy and Sang-Jae Kim: Solid State Communications. Vol.152 (2012), P.375–380

Google Scholar

[4] S.Z. Karazhanov, P.Ravindran, A.Kjekhus, H.Fjellvag, U.Grossnerc and B.G. Svensson: Journal of Crystal Growth. Vol.287 (2006) P.162–168

DOI: 10.1016/j.jcrysgro.2005.10.061

Google Scholar

[5] S.H. Wei and A.Zunger: Phys. Rev. B. Vol.37 (1988), P.8958-8981

Google Scholar

[6] H. G. Sun, X.Zhao, L.Zhang and W.L. Fan: J. Phys. Chem. C. Vol.115 (2011), P.2218–2227

Google Scholar

[7] H. Y. Ni, X.F. Cao, G.Z. Hu: Crystal Growth & Design. Vol.7 (2007), P.280-285

Google Scholar

[8] X.C. Shen: The Spectrum and Optical Property of Semiconductor (Science Publishers, Beijing China 1992)

Google Scholar

[9] R. M. Martin: Electronic Structure: Basic Theory and Practical Methods; (Cambridge University Press, Cambridge England 2004)

Google Scholar

[10] Y. G.Chang, J.Xu, Y.Y. Zhang, S.Y.Ma, L.H. Xin, L.Zhu and C.T.Xu: J. Phys. Chem.C. Vol.113 (2009), P.18761–18767

Google Scholar

[11] J.B. Zhong, J.Z. Li, X.Y.He, J.Zeng, Y.Lu, W.Hu and K.Lin: Current Applied Physics Vol.12 (2012), P.998-1001

Google Scholar

[12] E.K. Liu, B.S. Zhu and J.S. Luo: Semiconductor Physics (Defense Industry Publishers, Beijing China 2005)

Google Scholar

[13] K. Hiroko, N.Takato, N.Yoichiro, H.Yoshinori: Jpn. J. Appl. Phys. Vol.35 (1996), P.1600-1602

Google Scholar

[14] X. G. Ma, L.Miao, S.W. Bie and J.J. Jiang: Solid State Commun. Vol.150 (2010), P.689–692

Google Scholar

[15] S.Y. Xiong, L.Wang Q.M. Dong and P.Liang: Sci. Sin.Phys. Mech. Astron. Vol.42 (2012), P.6-14(in Chinese)

Google Scholar