CIGS Thin Film: Synthesis and Characterization

Guang Xing Liang; Ping Fan; Zhuang Hao Zheng; Jing Ting Luo; Dong Ping Zhang; Jing Rong Chi; Chao Ming Chen; Jun Zhao

doi:10.4028/www.scientific.net/AMR.734-737.2480

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 734-737CIGS Thin Film: Synthesis and Characterization

CIGS Thin Film: Synthesis and Characterization

Abstract:

Cu (In, Ga)Se₂(CIGS) thin film was prepared by ion beam sputtering Cu, In, Se and evaporating Ga elements continuously on BK7 glass substrate and the 4-layer film was then annealed at 400 oC for 1h in the same vacuum chamber. The CIGS thin film is single-phase with chalcopyrite structure and has a preferential (112) orientation. Its elemental composition approaches the stochiometric composition ratio of 1:0.7:0.3:2 and it consists of densely packed grain clusters. An energy band gap of about 1.30 eV and an absorption coefficient of 10⁵ cm^-1 are obtained. Thus, an optimization of the fabrication for CIGS thin films was achieved.

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Periodical:

Advanced Materials Research (Volumes 734-737)

Pages:

2480-2483

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.734-737.2480

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Online since:

August 2013

Authors:

Guang Xing Liang, Ping Fan, Zhuang Hao Zheng, Jing Ting Luo, Dong Ping Zhang, Jing Rong Chi, Chao Ming Chen, Jun Zhao

Keywords:

CIGS Thin Films, Electrical Properties, Evaporation, Ion-Beam Sputtering Deposition, Microstructure, Optical

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