UV-Raman Microscopy on the Analysis of Ultra-Low-K Dielectric Materials on Patterned Wafers

Abstract:

With the shrinkage of the IC device dimension, Cu and ultra-low-k dielectric were introduced into IC devices to reduce the RC delay. Ultra-low-k dielectrics generally suffer more damage than silicon oxide dielectric during process integration and subsequently cause reliability degradation. Therefore, ultra-low-k damage characterization on Cu damascene structures is of great importance to understand the damage mechanisms. This paper describes the application of UV-Raman microscopy with enhanced spatial resolution and signal sensitivity for characterizing ultra-low-k dielectric in the three-dimension structure of Cu metallization with nanometer feature size. It shows UV-Raman technique has an advantage in analyzing ultra-low-k layer on patterned wafer and extracting ultra-low-k signals from Cu/ultra-low-k mixed structure. UV-Raman is also effective to characterize the ultra-low-k degradation for ultra-low-k related reliability analysis by time dependent dielectric breakdown (TDDB) test.

• Periodical: Advanced Materials Research (Volume 740)
• Pages: 680-689
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.740.680
• Online since: August 2013
• Authors: Maggie Y.M. Huang, Jeffrey C.K. Lam, Hao Tan, Tsu Hau Ng, Mohammed Khalid Bin Dawood, Zhi Hong Mai
• Keywords: Patterned Wafer, Time Dependent Dielectric Breakdown, Ultra-Low-K, UV-Raman

References

[1] International Technology Roadmap for Semiconductors 2011 Edition, p.35.

[2] G. S. Haase, E. T. Ogawa, and J. W. McPherson: J. Appl. Phys. Vol. 98 (2005), p.034503.

[3] M. He, S. Novak, L. Vanamurthy, H. Bakhru, J. Plawsky, and T. M. Liu: Appl. Phys. Lett. Vol. 97 (2001), p.252901.

DOI: 10.1063/1.3529492

[4] J. R. Lioyd, C. E. Murray, S. Ponoth, S. Cohen, and E. Liniger: Microelectron. Reliab. Vol. 46 (2006), p.1643.

[5] K. Kohama, K. Ito, K. Mori, K. Maekawa, Y. Shirai, and M. Murakami: J. Electron. Mater. Vol. 38 (2009), p. (1913).

[6] E. Maatinez, N. Rochat, C. Guedj, C. Licitra, G. Imbert, and Y. L. Friec: J. Appl. Phys. Vol. 100 (2006), p.124106.

[7] N. Ghalichechian, A. Modafe, R. Ghodssi, P. Lazzeri, V. Micheli, and M. Anderte: J. Vac. Sci. Technol. B Vol. 22 (2004), p.2439.

DOI: 10.1116/1.1787519

[8] J. Bao, H. Shi, J. Liu, H. Huang, P. S. Ho, M. D. Goodner, M. Moinpour, and G. M. Kloster: J. Vac. Sci. Technol. B Vol. 26 (2008), p.219.

DOI: 10.1116/1.2834562

[9] M. A. Worsley, S. F. Bent, N. C. M. Fuller, T. L. Tai, J. Doyle, M. Rothwell, and T. Dalton: J. Appl. Phys. Vol. 101 (2007), p.013305.

[10] 10 X. F. Hua, C. Stolz, G. S. Oehrlein, P. Lazzeri, N. Coghe, M. Anderle, C. K. Inoki, T. S. Kuan, and P. Jiang: J. Vac. Sci. Technol A Vol. 23 (2005), p.151.

[11] Q. Wu and K. Gleason: J. Vac. Sci. Technol. A Vol. 21 (2003), p.388.

[12] H. W. Ro, H. Peng, K. Niihara, H. Lee, E. K. Lin, A. Karim, D. W. Gidley, H. Jinnal, D. Y. Yoon, and C. L. Soles: Adv. Mater. Vol. 20 (2008), p. (1932).

[13] C. Cartereta and A. Labrosseb: J. Raman Spectrosc. Vol. 41 (2010), p.996.

[14] N. J. Trujillo, Q. Wu, and K. K. Gleason: Adv. Funct. Mater. Vol. 20(2010), p.607.

[15] H. L. Shi, J. J. Bao, J. J. Liu, H. Huang, P. S. Ho, M. D. Goodner, M. Moinpour, G. M. Kloster: Mater. Res. Soc. Symp. Proc. Vol. 990 (2007), p.51.

[16] H. L. Shi, J. Bao, R. S. Smith, H. Huang, J. Liu, P. S. Ho, M. L. Mcswiney, M. Moinpour, G. M. Kloster: Appl. Phys. Lett. Vol. 93 (2008), p.192909.

DOI: 10.1063/1.3026528

[17] J. Bao, H. L. Shi, J. Liu, H. Huang, P. S. Ho, M. D. Goodner, M. Moinpour, G. M. Kloster G. M. Kloster: J. Vac. Sci. Technol. B Vol. 26 (2008), p.219.

DOI: 10.1116/1.2834562

[18] B. C. Trasferetti, C. U. Davanzo, and M. A. Moraes: Macromolecules Vol. 37 (2004), p.459.

[19] C. Doux, K.C. Aw, M. Niewoudt, and W. Gao:, Microelectron. Eng. Vol. 83 (2006), p.387.

[20] H. Ehrenreich and H. R. Philippi: Phys. Rev. Vol. 121 (1962), p.1622.