Characterizations of Liquid Polycabosilane (LPCS) Used as SiC Matrix Precursor for CLVD Process

Abstract:

Characterizations of a liquid polycarbosilane used as SiC matrix precursor were investigated by TG-DTA, FTIR, XRD, etc, which indicated the feasibility of using LPCS as precursor for CLVD process to prepare C/SiC composites. The results show that the inorganic conversion of LPCS to SiC is almost completed at 900 °C, and the crystallization of β-SiC appears at 855 °C approximately. As the temperature increases, the deposit becomes more pure and the crystallinity of β-SiC also increases. The atomic ratio of C/Si in the deposit attained at 1200 °C is near-stoichiometric, the crystallite size of β-SiC is about 33.4 nm.

• Periodical: Advanced Materials Research (Volumes 750-752)
• Pages: 195-199
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.750-752.195
• Online since: August 2013
• Authors: Min Mei*, Xin Bo He, Xuan Hui Qu, Hai Feng Hu, Yu Di Zhang
• Keywords: C/SiC Composites, Characterization, Chemical Liquid-Vapor Deposition, Liquid Polycabosilane

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