μMAX Enhanced 190% of a Strained NMOS Based on SiGe Virtual Substrate

Zhao Huan Tang; Kai Zhou Tan; Wei Cui; Bin Wang

doi:10.4028/www.scientific.net/AMR.756-759.154

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 756-759μMAX Enhanced 190% of a Strained NMOS Based on...

μ_MAX Enhanced 190% of a Strained NMOS Based on SiGe Virtual Substrate

Abstract:

Based on SiGe virtual substrate technology, a high-performance strained NMOS is obtained. By growing 2~3μm SiGe relaxed layer, 100~200nm strained SiGe layer and 20nm strained silicon layer, and also forming a P-well by multiple implantation technology, a surface strained NMOS is fabricated. Finally, Measured results shown that drain-source current and the low field maximal mobility of the strained NMOS are enhancement of up to 190% at Vgs=3.5V, which is almost three times to the value of common Silicon NMOS and is also better than the 170% reported in public.

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Periodical:

Advanced Materials Research (Volumes 756-759)

Pages:

154-157

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.756-759.154

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Online since:

September 2013

Authors:

Zhao Huan Tang, Kai Zhou Tan, Wei Cui, Bin Wang

Keywords:

Mobility, Relaxed Layer, SiGe Virtual Substrate, Strained NMOS, Strained-Silicon

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