UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated by RF Magnetron Sputtering Method

Jun Dai; Yi Jie Fan; Qiang Sun

doi:10.4028/www.scientific.net/AMR.771.67

Paper Titles

The Preparation, Morphology and Electrical Properties of Polystyrene/Graphene Nanocomposite Foams Using Supercritical Carbon Dioxide
p.51

Effect of Reflux Time on Photocatalytic Properties of N-TiO₂ Synthesized by Reflux Method
p.55

Characterization of Cathode Materials Ln_0.7Sr_0.2Ca_0.1Co_0.7Fe_0.3O_2.85(Ln=La, Pr and Nd) Synthesized by Microwave Sintering Techniques
p.59

Preparation of P-and S-Containing UV-Cured Cardanol Polymers via Thiol-Ene Click Chemistry
p.63

UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated by RF Magnetron Sputtering Method
p.67

Aspheric Surface NC Polishing Force-Position Decoupling Control Technology
p.71

Research on Particle Flow Erosion Precision Electroforming Technology
p.75

Study on the Influence of Organic Fiber and SBR Latex on the Bending Properties of Rubber Mortar
p.83

Study on the Influence of Polypropylene Fiber and SBR Latex on the Mechanical Properties of Rubber Mortar and Microstructures Analyzed
p.89

HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 771UV Sensitive Indium Gallium Zinc Oxide MOS- FET...

UV Sensitive Indium Gallium Zinc Oxide MOS- FET Fabricated by RF Magnetron Sputtering Method

Abstract:

Transparent indium gallium zinc oxide (IGZO) thin film was fabricated on SiO₂/Si substrate by radio-frequency magnetron sputtering method. The IGZO thin film was characterized by X-ray diffraction, UV-VIS spectrometer, X-ray photoelectron energy spectrum to determine its optical, structural properties and binding energy information. The IGZO thin film was employed to construct metal-oxide-semiconductor field effect transistors (MOS-FET), which showed an on/off current of about 10³. When the device was illuminated by UV light, the drain-to-source current was increased by 15 folders at -5 V gate voltages. The result indicates that the IGZO MOS-FET is sensitive to UV light.

You might also be interested in these eBooks

Materials in Industry and Nanotechnology

View Preview

Info:

Periodical:

Advanced Materials Research (Volume 771)

Pages:

67-70

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.771.67

Citation:

Cite this paper

Online since:

September 2013

Authors:

Jun Dai, Yi Jie Fan, Qiang Sun

Keywords:

Indium Gallium Zinc Oxide, MOS-FET, UV Photoresponse

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] H. Hosono, K. Nomura, Y. Ogo, T. Uruga and T. Kamiya, 354, 2796-2800. Journal of Non-Crystalline solids (2008).

DOI: 10.1016/j.jnoncrysol.2007.10.071

Google Scholar

[2] A. Sato, M. Shimada, K. Abe, R. Hayashi, H. Kumoni, K. Nomura, T. Kamiya, M. Hirano and H. Hosono, Thin Solid Film (2009).

DOI: 10.1016/j.tsf.2009.01.165

Google Scholar

[3] B. D. Ahn, S. H. Oh, C. H. Lee, G. H. Kim, H. J. Kim and S. Y. Lee, 309, 128-133. Journal of Crystal Growth(2007).

Google Scholar

[4] D. H. Lee, S. Y. Han, G. S. Herman and C. H. Chang, 19, 3135-3137. Journal of Meterials Chemistry(2009).

Google Scholar

[5] A. Suresh, P Gollakota, P. Wellenius, A. Dhawan and J. F. Muth, 516, 1326-1329. Thin Solid Films(2008).

DOI: 10.1016/j.tsf.2007.03.153

Google Scholar

[6] H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya and H. Hosono, 89, 112123. Applied Physics Letters(2006).

DOI: 10.1063/1.2353811

Google Scholar

[7] G. H. Kim, H. S. Kim, H. S. Shin, B. D. Ahn, K. H. Kim and H. J. Kim, 517, 4007-4010. Thin Solid Films(2009).

DOI: 10.1016/j.tsf.2009.01.151

Google Scholar

[8] G. H. Kim, H. S. Shin, B. D. Ahn, K. H. Kim, W. J. Park and H. J. Kim, 156(1), H7-H9. Journal of The Electrochemical Society (2009).

Google Scholar

[9] H. Kind, H. Q. Yan, B. Messer, M. Law, and P. D. Yang, 14 , 158. Adv. Mater. (2002).

Google Scholar

[10] H. W. Zan, W. T. Chen, C. W. Chou, C. C. Tsai, C. N. Huang and H. W. Hsueh, 13(5)H144-H146, Electrochemical and Solid-State Letters. (2010).

Google Scholar

[11] Y. Wu, E. Girgis, V. Strom, W. Voit, L. Belova and K. V. Rao, 208(1) 206-209, Phys. Status. Solidi A(2011).

Google Scholar

[12] M. S. Par, D. H. Lee, E. J. Bae, D. H. Kim, J. G. Kang, D. H. Son and S. O. Ryu, 529, 137-146, Mol. Cryst. Liq. Cryst. (2010).

Google Scholar

[13] G. H. Kim, B. D. Ahn, H. S. Shin, W. H. Ieong, H. J. Kim and H. J. Kim, 94, 233501, Applied Physics Letters. (2009).

Google Scholar

[14] Yan Wu, E. Girgis, V. Strom, W. voit, L. Belova and K. V. Rao． 208, No. 1, 206-209, Phys. Status Solidi A. (2011).

Google Scholar