Effect of Gallium Doping on the Properties of GZO Target

Abstract:

The main purpose of this paper was to analyze how the doping content of Ga₂O₃ effect the Gallium doped zinc oxide (GZO) targets. GZO targets were prepared by air sintering. The density, sheet resistance, bending strength and Vickers hardness were measured. The morphologies and microstructures were characterized by XRD and SEM. The results showed that GZO target with Ga₂O₃ content of 1wt% showed the best properties which corresponded to the highest relative density and bending strength of 99.2 % and 91.79MPa respectively, and the lowest sheet resistance of 7.36Ω/. While the Ga₂O₃ content was higher (2 wt% or 3 wt %), the second phase came out.

• Periodical: Advanced Materials Research (Volumes 779-780)
• Pages: 363-367
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.779-780.363
• Online since: September 2013
• Authors: Cun Qi Liu, Xue Xian Cai, Zhong Jian Zhang, Ling Gao, Chao Xiao, Fu Liang Shang, Hai Tao Yang
• Keywords: Air Sintering, Ga₂O₃ Content, GZO Targets

References

[1] Lee J Y, Choi Y S, et al: Optimizing n-ZnO/p-Si hetero junctions for photodiode applications [J]. Thin Solid Film, 2002, 403-404: 553-557.

DOI: 10.1016/s0040-6090(01)01550-4

[2] Kim J H, Jeon K A, Kim G H, et al: Electrical, structural, and optical properties of ITO thin films prepared at room temperature by pulsed laser deposition [J]. Appl. Surf. Sci., 2006, 252: 4834-4837.

DOI: 10.1016/j.apsusc.2005.07.134

[3] A. Tanaka, M. Hirata, Y. Kiyohara, et al: Review of pulmonary toxicity of indium compounds to animals and humans [J]. Thin Solid Films, 2010: 518: 2934-2936.

DOI: 10.1016/j.tsf.2009.10.123

[4] Y.C. Lin, M.Z. Chen, C.C. Kuo, W.T. Yen: Electrical and optical properties of ZnO: Al film prepared on polyethersulfone substrate by RF magnetron sputtering [J]. Colloid and Surface A. 2009: 337: 52–56.

DOI: 10.1016/j.colsurfa.2008.11.049

[5] Minami T: Substitution of transparent conducting oxide thin films for indium tin oxide transparent electrode applications [J]. Thin Solid Films. 2008; 516: 1314–1321.

DOI: 10.1016/j.tsf.2007.03.082

[6] Fang G, Li D, Yao BL: Fabrication and vacuum annealing of transparent conductive AZO thin films prepared by DC magnetron sputtering [J]. Vacuum 2003; 68: 363–72.

DOI: 10.1016/s0042-207x(02)00544-4

[7] R.K. Shukla, A. Srivastava, A. Srivastava, et al: Growth of transparent conducting nanocrystalline Al doped ZnO thin films by pulsed laser deposition [J], Journal of Crystal Growth 2006; 294: 427–431.

DOI: 10.1016/j.jcrysgro.2006.06.035

[8] X. Bie, J.G. Lu, L. Gong, et al: Transparent conductive ZnO: Ga films prepared by DC reactive magnetron sputtering at low temperature. Applied Surface Science 2012: 258: 9005–9010.

DOI: 10.1016/j.apsusc.2009.08.018

[9] G. Yu, J. Gao, J.C. Hummelen, F: Wudl, A.J. Heeger. Polymer photovoltaic cells: Enhanced efficiencies via a network of internal donor-acceptor heterojunctions [J]. Science 1995: 270: 1789–1791.

DOI: 10.1126/science.270.5243.1789

[10] W.S. Choi, E.J. Kim, S.G. Seong, et al: Optical and structural properties of ZnO/TiO2/ZnO multi-layers prepared via electron beam evaporation [J]. Vacuum 2009: 83: 878–882.

DOI: 10.1016/j.vacuum.2008.09.006

[11] M. Arshad, A. Azam, A.S. Ahmed, et al: Effect of Co substitution on the structural and optical properties of ZnO nanoparticles synthesized by sol-gel route Journal of Alloys and Compounds. 2011: 509: 8378–8381.

DOI: 10.1016/j.jallcom.2011.05.047

[12] Cheng, L.H., Zheng, L.Y., Meng, L., et al: Electrical properties of Al2O3-doped ZnO varistors prepared by sol-gel process for device miniaturization. Ceramics International, 2012: 38S: S457–S461.

DOI: 10.1016/j.ceramint.2011.05.039

[13] H. Mondragon-Suarez, A. Maldonado, M. de la L. Olvera, et al: Appl. Surf. Sci. 193 (2002) 52–59.

[14] P. Singh, A. Kaushal, D. Kaur: Alloy Compd. 471 (2009) 11–15, pulsed laser deposition.

[15] Bojanna P. Shantheyanda, Kalpathy B. Sundaram, Narendra S. Shiradkar: Studies on the effect of hydrogen doping during deposition of Al: ZnO films using RF magnetron sputtering [J]. Materials Science and Engineering 2012: B 177: 1777– 1782.

DOI: 10.1016/j.mseb.2012.08.026

[16] L. Balakrishnan, S. Gowrishankar, N. Gopalakrishnan: Fabrication of tridoped p-ZnO thin film and homojunction by RF magnetron sputtering [J]. Ceramics International 2012, 38 (8), 6221–6227.

DOI: 10.1016/j.ceramint.2012.04.075