Rapid Thermal Annealing on GaSb Thin Films Grown by Molecular Beam Epitaxy on GaAs Substrates

Abstract:

Unintentionally doped GaSb films grown by Molecular Beam Epitaxy (MBE) on GaAs (001) substrates were annealed under different temperatures and time. It was found that the rapid thermal annealing (RTA) process can improve the optical properties. By changing annealing temperature and time, the optimized annealing temperature and times are found to be 650°C and 30s, respectively. Point defects and dislocations are two major kinds of defect in undoped GaSb thin films grown by MBE on GaAs (001) substrates.

• Periodical: Advanced Materials Research (Volume 787)
• Pages: 143-147
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.787.143
• Online since: September 2013
• Authors: Rui Ting Hao, Jie Guo, Shu Kang Deng, Ying Liu, Yan Mei Miao, Ying Qiang Xu
• Keywords: Dislocation, Gallium Antimonide, Point Defect, Rapid Thermal Annealing

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