Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors

Li Li; Qi Bin Liu

doi:10.4028/www.scientific.net/AMR.820.208

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 820Effect of Technological Parameters on the...

Effect of Technological Parameters on the Microstructure and Electrical Properties of ZnO Varistors

Abstract:

To improve voltage-gradient and to reduce the sintering temperature of ZnO varistors, high voltage-gradient ZnO varistors were synthesized with a conventional solid state reaction route. By means of SEM and DC parameter instrument for varistor, the influence of different technological parameters on microstructure, voltage-gradient and leakage current of ZnO varistors was investigated. The experimental results show that by using the process that presintering the additives at 850°C, the density is improved, the voltage-gradient is increased, and the leakage current is decreased. The optimum voltage-gradient and leakage current are 371V/mm and 3μA, respectively.

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Periodical:

Advanced Materials Research (Volume 820)

Pages:

208-211

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.820.208

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Online since:

September 2013

Authors:

Li Li, Qi Bin Liu

Keywords:

Leakage Current, Microstructure, Technological Parameters, Voltage-Gradient, ZnO Varistors

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