The Study of Stability of Tungsten Plug CMP Slurry for IC Multilevel Interconnect

Ying Qian Jia; Xin Huan Niu; Li Li; Ning Li

doi:10.4028/www.scientific.net/AMR.834-836.658

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 834-836The Study of Stability of Tungsten Plug CMP Slurry...

The Study of Stability of Tungsten Plug CMP Slurry for IC Multilevel Interconnect

Abstract:

With the developing of integrated circuit(IC) technique, improving of integration level, reducing of feature size and increasing the wafer size, the stringent requirements for global planarization during IC fabrication are raised. During chemical mechanical polishing(CMP) of multilevel interconnect for IC, there are obvious influence of the polishing quality on performances of the device．CMP slurry is one of the important factors of influencing the polishing quality. In this work, the stability of tungsten plug CMP slurry for IC multilevel interconnect was studied. Through experiment, interaction between the components in the CMP slurry was analyzed, and stable slurry with optimized polishing parameters to achieve higher removal rate were defined．

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Periodical:

Advanced Materials Research (Volumes 834-836)

Pages:

658-661

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.834-836.658

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Online since:

October 2013

Authors:

Ying Qian Jia*, Xin Huan Niu, Li Li, Ning Li

Keywords:

Chemical Mechanical Polishing (CMP), Slurry, Slurry Components, Tungsten Plug

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