Ultraviolet Photodetectors Based on MgZnO Thin Films

Abstract:

In recent years, MgZnO alloy becomes one of the most suitable materials for the fabrication of ultraviolet detectors. In this paper, we have fabricated three metal semiconductor metal (MSM) photodetectors on Mg_0.42Zn_0.58O film grown by radio frequency magnetron sputtering. The interdigital electrodes are 500 um long and 5 um wide with an interelectrode spacing 2, 5 and 10 um, respectively. The structural, electrical and optical properties of epilayers were characterized by various techniques. At 5 V bias, a peak responsivity of 1.09 mA/W was achieved at 283 nm for the device with 2 um interelectrode spacing. The peak responsivity at 283 nm increased with the reduction of the finger pitch for three devices and the ultraviolet-visible rejection ratio (R283 nm/R400 nm) was more than one order of magnitude at 5 V bias.

• Periodical: Advanced Materials Research (Volume 852)
• Pages: 291-295
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.852.291
• Online since: January 2014
• Authors: Man Zhao, Da Yong Jiang, Wen Jing Liu, Guang Yang, De Jun Li
• Keywords: MgZnO, Photodetector, Responsivity, Ultraviolet

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