Growth and Morphology of SbSe Based Island Films

Oleg Rabinovich

doi:10.4028/www.scientific.net/AMR.875-877.1387

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HomeAdvanced Materials ResearchAdvanced Materials Research Vols. 875-877Growth and Morphology of SbSe Based Island Films

Growth and Morphology of SbSe Based Island Films

Abstract:

SbSe nanoisland films have been grown via incongruent evaporation of Sb_1xSe_x films, and their surface morphology has been studied by atomic force microscopy. The surface density and characteristic dimensions of the islands have been shown to depend on evaporation time and temperature which correspond to range of quantum size spectrum of electron states and indicates the possibility of controlling growth-oriented quantum-well structures with desired properties based on Sb₂Se₃.

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Periodical:

Advanced Materials Research (Volumes 875-877)

Pages:

1387-1391

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.875-877.1387

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Online since:

February 2014

Authors:

Oleg Rabinovich

Keywords:

Growth, Incongruent Evaporation, Semiconductor

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References

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