Features of F2 Сenters Accumulation in Oxygen-Containing LiF Crystals

Ludmila A. Lisitsyna; Raigul Kassymkanova; Viktor M. Lisitsyn

doi:10.4028/www.scientific.net/AMR.880.62

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 880Features of F2 Сenters Accumulation in...

Features of F₂ Сenters Accumulation in Oxygen-Containing LiF Crystals

Abstract:

A mechanism for correlated formation of intrinsic defects F₂ centers and impurity hole centers with hydrogen bond in oxygen-containing LiF crystals is suggested.

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Advanced Materials Research (Volume 880)

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62-67

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https://doi.org/10.4028/www.scientific.net/AMR.880.62

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Online since:

January 2014

Authors:

Ludmila A. Lisitsyna*, Raigul Kassymkanova, Viktor M. Lisitsyn

Keywords:

Accumulation, Color Center, Electron Beam, Impurity Nanosized Particles

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References

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