Metallic Layer Reflectance Analysis Using Design of Experiment

Zaliman Sauli; Vithyacharan Retnasamy; Ong Tee Say; Kok Soo Yih

doi:10.4028/www.scientific.net/AMR.893.461

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 893Metallic Layer Reflectance Analysis Using Design...

Metallic Layer Reflectance Analysis Using Design of Experiment

Abstract:

In this work, a Full Factorial Experimentation technique, Design of Experiment (DOE) was developed and used to control the parameter of RIE (Reactive Ion Etching) process on a silicon wafer with aluminium layer. The objective of this work is to examine the Reactive Ion Etching (RIE) process on aluminium with different parameter, which are temperature, vacuum, RF (Radio Frequency) power and gas flow. Then, AFM (Atomic Force Microscope) and Lambda 950 spectrometer are used to analyse the grain size and light reflectance on the test specimen after RIE process. From the result, all four parameters of RIE were give an effect on grain size and surface reflectance on the test specimen. The parameter of gas flow is the most influence factor for grain size and surface reflectance in RIE process for aluminium layer compared to other parameters in this work.

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Periodical:

Advanced Materials Research (Volume 893)

Pages:

461-464

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.893.461

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Online since:

February 2014

Authors:

Zaliman Sauli*, Vithyacharan Retnasamy, Ong Tee Say, Kok Soo Yih

Keywords:

AFM, Aluminum (Al), Design of Experiment (DOE), Lambda 950, Light Reflectance, RIE

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