I-V Characterization Study of Porous Silicon Formation by Doubled-Cell Electrochemical Etching

Yong Yin Xiao; Xiu Hua Chen; Shao Yuan Li; Wen Hui Ma; Yu Ping Li; Jia Li He; Hui Zhang; Jiao Li

doi:10.4028/www.scientific.net/AMR.898.119

Paper Titles

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 898I-V Characterization Study of Porous Silicon...

I-V Characterization Study of Porous Silicon Formation by Doubled-Cell Electrochemical Etching

Abstract:

The anodic current-potential behaviors of PS fabrication by doubled-cell electrochemical etching method have been studied. There are three reaction regions: porous silicon formation region, a transition region and electropolishing region in I-V curves. Polishing current and the HF acid concentration has a directly proportional relationship, the electropolishing current of silicon increased with the increase of the concentration of HF, in a certain concentration range. The electropolishing current of silicon increased with increasing the sweep rate on the condition of the same HF concentration.

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Periodical:

Advanced Materials Research (Volume 898)

Pages:

119-122

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.898.119

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Online since:

February 2014

Authors:

Yong Yin Xiao, Xiu Hua Chen*, Shao Yuan Li, Wen Hui Ma, Yu Ping Li, Jia Li He, Hui Zhang, Jiao Li

Keywords:

Anodization, Electrochemical Etching, Electropolishing, Porous Silicon

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