The Influence of Sintering Atmosphere and Reoxidation Temperature on the Electrical Properties of the Chip-Type Ba_1-xSm_xTiO₃ Based Ceramics

Abstract:

The PTCR characteristics of (Ba_1-xSm_x)TiO₃ (BSMT) with different donor-doped concentration (x) sintered in a reducing atmosphere and reoxidized in air are investigated. The results reveal that the room temperature resistivity (ρ_RT) of the semiconducting BSMT ceramics first decreases and then increases with increasing of the x values, especially when x is 0.004, the semiconducting BSMT ceramics reoxidized at 850oC for 1 h after sintering at 1300 °C for 30 min in a reducing atmosphere achieve a lower room temperature resisitivity of 82.6 Ωcm. in addition, the doped 0.1 mol% Sm³⁺ BSMT samples fired at 1300 °C for 30 min in air exhibit remarkable PTCR effect with a resistance jumping ratio of 3.4 orders magnitude; moreover, a lower ρ_RT of the BSMT specimens sintered in a reducing atmosphere is obtained.

• Periodical: Advanced Materials Research (Volume 900)
• Pages: 134-137
• DOI: https://doi.org/10.4028/www.scientific.net/AMR.900.134
• Online since: February 2014
• Authors: Xu Xin Cheng*, Dong Xiang Zhou, Qi Jun Xiao, Zhao Xiong Zhao
• Keywords: Ba-Ti Ratio, BaTiO₃ Ceramics, PTCR Effect, Reoxidation

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